Current redistribution in multi-chip IGBT modules under various gate drive conditions

This paper investigates the effects on the IGBT module of the use of the active region during switching. Results showing the module chip currents for active voltage control, active snubbering and conventional switching are presented. Thermal measurements are compared for each method. Conclusions are drawn concerning the relative effect on the modules of each of the switching methods, and then extended to cover the issues related to modules containing up to 48 chips.