Schottky Yapılar Üzerine İnceleme ve Analiz Çalışması
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[1] E. Antončík,et al. On the theory of surface states , 1961 .
[2] F. Yakuphanoglu,et al. Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell , 2011 .
[3] A. Goetzberger,et al. Interface states on semiconductor/insulator surfaces , 1976 .
[4] F. Yakuphanoglu,et al. Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques , 2010 .
[5] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[6] An analysis of effects of device structures on retention characteristics in MFIS structures , 2000, ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076).
[7] Yuan-kai Zheng,et al. Fabrication and characteristics of Au/PZT/BIT/p-Si ferroelectric memory diode , 2001 .
[8] B. Salem,et al. Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements , 2014 .
[9] C. R. Crowell,et al. Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers , 1964 .
[10] Hans A. Bethe,et al. Theory of the Boundary Layer of Crystal Rectifiers , 1991 .
[11] Woo-Sik Kim,et al. Thermal-stress stability of yttrium oxide as a buffer layer of metal-ferroelectric-insulator-semiconductor field effect transistor , 2005 .
[12] Jürgen H. Werner,et al. Barrier inhomogeneities at Schottky contacts , 1991 .
[13] K. Reinhardt,et al. Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions , 1990 .
[14] Barrier modification of Au/n-GaAs Schottky diode by swift heavy ion irradiation , 2007 .
[15] A. Tataroğlu,et al. The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures , 2008 .
[16] H. Ishiwara,et al. Long Retention Performance of a MFIS Device Achieved by Introducing High-k Al 2 O 3 /Si 3 N 4 /Si Buffer Layer , 2003 .
[17] I. Yahia,et al. Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications , 2010 .
[18] Indudhar Panduranga Vali,et al. Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation , 2017 .
[19] Ching-Yuan Wu. Interfacial layer theory of the Schottky barrier diodes , 1980 .
[20] A. Tataroğlu,et al. Gamma-ray irradiation effects on the interface states of MIS structures , 2009 .
[21] A. Dakhel. Nanocrystalline Pr-doped ZnO insulator for metal–insulator–Si Schottky diodes , 2009 .
[22] A. Tataroğlu,et al. The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics , 2009 .
[23] A. Tataroğlu,et al. The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n‐Si(MFIS) structures , 2011 .
[24] A. Bartolomeo. Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction , 2015, 1505.07686.
[25] A. Turut,et al. Determination of contact parameters of Au/Carmine/n-Si Schottky device , 2010 .
[26] A. Tataroğlu,et al. Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures , 2008 .
[27] H. Ishiwara,et al. Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures , 1999 .
[28] A. N. Daw,et al. On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode , 1986 .
[29] H C Card,et al. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes , 1971 .
[30] Jiabing Lv,et al. Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts , 2016 .
[31] Simulation of the capacitance-voltage characteristic in the case of epitaxial ferroelectric films with Schottky contacts , 2015 .
[32] C. R. Crowell,et al. Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers , 1969 .
[33] A. C. Pandey,et al. Effect of ion irradiation on current–voltage characteristics of Au/n-GaN Schottky diodes , 2009 .
[34] R. L. Meirhaeghe,et al. Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation , 1994 .
[35] A. Tataroğlu,et al. The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes , 2003 .
[36] M. Yıldırım,et al. Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity , 2017 .
[37] K. Ueda,et al. Ferromagnetic Schottky junctions using diamond semiconductors , 2012 .
[38] I. Uslu,et al. Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs) , 2013 .
[39] H. Henisch. Metal-semiconductor Schottky barrier junctions and their applications , 1986, Proceedings of the IEEE.
[40] F. Yakuphanoglu,et al. Current–voltage and capacitance–voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact , 2008 .
[41] J. D. Levine. Schottky‐Barrier Anomalies and Interface States , 1971 .
[42] R. Gutmann,et al. Interface state density in Au-nGaAs Schottky diodes , 1977 .
[43] S. Demirezen,et al. The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) , 2014 .
[44] Serhat Orkun Tan,et al. The scientific studies on smart grid in selected European countries , 2017 .
[45] I. Yahia,et al. Electrical and photovoltaic characteristics of Al/n-CdS Schottky diode , 2009 .
[46] E. H. Snow,et al. Surface Effects on Metal-Silicon Contacts , 1968 .
[47] O. Tretyak,et al. Room temperature negative differential capacitance in self-assembled quantum dots , 2008 .
[48] Takashi Nakamura,et al. Properties of Ferroelectric Memory FET Using Sr2(Ta, Nb)2O7 Thin Film , 1998 .
[49] Gabriel Gomila,et al. Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor , 1997 .
[50] O. Çiçek,et al. Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities , 2016, Journal of Materials Science: Materials in Electronics.
[51] S. Özçelik,et al. Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures , 2012 .
[52] W. A. Hill,et al. A single-frequency approximation for interface-state density determination , 1980 .
[53] F. Yakuphanoglu,et al. Temperature dependence of electronic parameters of organic Schottky diode based on fluorescein sodiu , 2011 .
[54] Gang Chen,et al. A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator , 2012, Microelectron. Reliab..
[55] R. Bhajantri,et al. Effect of barium chloride doping on PVA microstructure: positron annihilation study , 2007 .
[56] The effect of native oxide layer on some electronic parameters of Au/n-Si/Au Sb Schottky barrier diodes , 2005 .
[57] Mantu K. Hudait,et al. Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes , 2000 .
[58] Jianru Han,et al. Samarium-doped Bi4Ti3O12 thin films grown on SiO2/p-Si(111) by spin coating metalorganic solution decomposition method , 2004 .
[59] S. E. San,et al. A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements , 2015 .
[60] V. L. Rideout. A review of the theory, technology and applications of metal-semiconductor rectifiers☆ , 1978 .
[61] I. Uslu,et al. Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions , 2016 .