论文信息 - Characterization of high fluence irradiations on advanced triple junction solar cells

Characterization of high fluence irradiations on advanced triple junction solar cells

Reported is the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of radiation damage on the optoelectronic properties of each subcell in the monolithic triple junction structure and correlate them with the illuminated (AM0, 1 sun, 25°C) current-voltage (IV) and quantum efficiency (QE) characteristics.

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