Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210–270 A/cm2 are measured for InGaAsN quantum-well lasers (Lcav=1000–2000 μm) with an emission wavelength of 1317 nm.

[1]  K. Uomi,et al.  Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy , 1999 .

[2]  Baoquan Sun,et al.  Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures , 2000 .

[3]  Nelson Tansu,et al.  Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers , 2002 .

[4]  Shunichi Sato,et al.  Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2000 .

[5]  S. Corzine,et al.  1.3 [micro sign]m InGaAsN vertical cavity surface emitting lasers grown by MOCVD , 2002 .

[6]  L. Mawst,et al.  High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers , 2001, IEEE Photonics Technology Letters.

[7]  Kent D. Choquette,et al.  Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um , 2000 .

[8]  T. Jouhti,et al.  Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy , 2001 .

[9]  Wolfgang Stolz,et al.  Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 /spl mu/m , 1999 .

[10]  C. L. Reynolds,et al.  Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling , 1999 .

[11]  E. Haller,et al.  Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells , 2001 .

[12]  Nelson Tansu,et al.  Experimental evidence of carrier leakage in InGaAsN quantum-well lasers , 2003 .

[13]  Kenichi Iga,et al.  Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2001 .

[14]  Kouji Nakahara,et al.  GaInNAs: a novel material for long-wavelength semiconductor lasers , 1997 .

[15]  J.S. Harris,et al.  Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m , 2002, IEEE Photonics Technology Letters.

[16]  L. Mawst,et al.  Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers , 2002, IEEE Photonics Technology Letters.

[17]  S. Forrest,et al.  High T/sub 0/ long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source , 2002, IEEE Photonics Technology Letters.