First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

We report, for the first time, a detailed study of the 100 mum-scaled emissivity and temperature variation in millisecond annealing (MSA) depending on the Si trench structure, the shallow trench isolation (STI) structure, and transistor structure measured by Thermawave method. Flash lamp annealing (FLA) was applied as MSA technique. In case of Si trench structure with varying the trench depth, the relation between the trench depth and emissivity was clarified quantitatively. It was found that micro temperature variation within a chip driven by the emissivity variation exceeds of 100degC as the transistor structure was annealed by FLA.

[1]  T. Yamamoto,et al.  Advantages of a New Scheme of Junction Profile Engineering with Laser Spike Annealing and Its Integration into a 45-nm Node High Performance CMOS Technology , 2007, 2007 IEEE Symposium on VLSI Technology.

[2]  E. Rosseel,et al.  3D Pattern Effects in RTA Radiative vs Conductive Heating , 2006 .

[3]  H. Kimura,et al.  RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[4]  P. Pichler,et al.  Pattern Effects with the Mask off... , 2006, 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.

[5]  Y. Wang,et al.  Minimizing Pattern Dependency in Millisecond Annealing , 2006, 2006 International Workshop on Junction Technology.

[6]  D. Camm,et al.  Temperature diagnostics for a dual-arc FRTP tool , 2002, 10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.