Measurements of α-factor in 2–2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers

Spectra of the linewidth enhancement factor (α) of room-temperature-operated high-power 2–2.5 μm In(Al)GaAsSb/GaSb type-I quantum-well (QW) lasers were measured using Hakki–Paoli technique. Values of α at threshold were in the range 2.5 to 4 for all devices under study. Devices emitting 1 W cw power at λ=2.5 μm have 1.5%–1.6% compressively strained QW active region and the lowest α equal to 2.5. Measured average filament spacings in near field are in rough agreement with predictions given by experimental α-factor values.

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