论文信息 - Quantum well intermixing with high spatial selectivity using a pulsed laser technique

Quantum well intermixing with high spatial selectivity using a pulsed laser technique

The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100 meV to be realised with a high spatial resolution in a GalnAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700/spl deg/C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be /spl les/25 /spl mu/m.

[1] C. J. McLean,et al. Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering , 1993 .

[2] A. C. Bryce,et al. Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures , 1994 .

[3] John H. Marsh,et al. Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures , 1992 .

[4] Dennis G. Deppe,et al. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures , 1988 .

[5] John H. Marsh,et al. Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps , 1992 .

[6] John H. Marsh,et al. High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering , 1994 .