Erbium silicate compound optical waveguide amplifier and laser [Invited]
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[1] Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires , 2016, Scientific reports.
[2] X. Duan,et al. High Gain Submicrometer Optical Amplifier at Near-Infrared Communication Band. , 2015, Physical review letters.
[3] Grégoire Beaudoin,et al. Recent advances in germanium emission [Invited] , 2013 .
[4] C. Ning,et al. Erbium concentration control and optimization in erbium yttrium chloride silicate single crystal nanowires as a high gain material , 2013 .
[5] Martin Kittler,et al. Germanium tin: silicon photonics toward the mid-infrared , 2013 .
[6] Li Yu,et al. Development trends in silicon photonics , 2013 .
[7] C. Ning,et al. Long lifetime, high density single-crystal erbium compound nanowires as a high optical gain material , 2012 .
[8] B. Wang,et al. Near-infrared electroluminescence in ErYb silicate based light-emitting device , 2012 .
[9] Lei Wang,et al. Hybrid ${\rm Si}_{3}{\rm N}_{4}\hbox{-}{\rm Er}/{\rm Yb}$ Silicate Waveguides for Amplifier Application , 2012, IEEE Photonics Technology Letters.
[10] M. Romagnoli,et al. An electrically pumped germanium laser. , 2012, Optics express.
[11] Zhiping Zhou,et al. Optical amplification in Er/Yb silicate slot waveguide. , 2012, Optics letters.
[12] Y. Arakawa,et al. III-V/Si hybrid photonic devices by direct fusion bonding , 2012, Scientific Reports.
[13] C. Ning,et al. Single-crystal erbium chloride silicate nanowires as a Si-compatible light emission material in communication wavelength , 2011 .
[14] B. Wang,et al. Optical amplification in Er/Yb silicate strip loaded waveguide , 2011 .
[15] F. Priolo,et al. Energy transfer and enhanced 1.54 μm emission in Erbium-Ytterbium disilicate thin films. , 2011, Optics express.
[16] Markus Pollnau,et al. Erbium‐doped integrated waveguide amplifiers and lasers , 2011 .
[17] Rui Li,et al. Electroluminescence from Er-doped Si-rich silicon nitride light emitting diodes , 2010 .
[18] Tadamasa Kimura,et al. Photoluminescence enhancement and high gain amplification of ErxY2−xSiO5 waveguide , 2010 .
[19] Namkyoo Park,et al. Cooperative upconversion and optical gain in ion-beam sputter-deposited Er(x)Y(2-x)SiO(5) waveguides. , 2010, Optics express.
[20] J. Michel,et al. Ge-on-Si laser operating at room temperature. , 2010, Optics letters.
[21] Bing Wang,et al. Processing and properties of ytterbium-erbium silicate thin film gain media , 2009, 2009 6th IEEE International Conference on Group IV Photonics.
[22] F. Priolo,et al. Concentration dependence of the Er3+ visible and infrared luminescence in Y2−xErxO3 thin films on Si , 2009 .
[23] Avi Zadok,et al. Electrically pumped hybrid evanescent Si/InGaAsP lasers. , 2009, Optics letters.
[24] G. Qin,et al. 1.53 µm photo- and electroluminescence from Er3+ in erbium silicate , 2009, Journal of Physics: Condensed Matter.
[25] F. Iacona,et al. Thermal evolution of Er silicate thin films grown by rf magnetron sputtering , 2008 .
[26] F. Priolo,et al. The influence of stoichiometry on the structural stability and on the optical emission of erbium silicate thin films , 2008 .
[27] Jurgen Michel,et al. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. , 2007, Optics express.
[28] Maria Miritello,et al. Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films , 2007 .
[29] Ke Liu,et al. Modeling and experiments of packaged Er3+-Yb3+ co-doped glass waveguide amplifiers , 2007 .
[30] R. Soref,et al. The Past, Present, and Future of Silicon Photonics , 2006, IEEE Journal of Selected Topics in Quantum Electronics.
[31] J. Bowers,et al. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. , 2006, Optics express.
[32] F. Cussó,et al. Modelling of Tm3+-doped LiNbO3 Waveguide Lasers , 2006 .
[33] John Bowers,et al. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells. , 2005, Optics express.
[34] Anthony J. Kenyon,et al. Erbium in silicon , 2005 .
[35] Lars Rebohle,et al. Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices , 2005 .
[36] Tadamasa Kimura,et al. Erbium–Silicon–Oxide crystalline films prepared by MOMBE , 2005 .
[37] Alexander Fang,et al. An all-silicon Raman laser , 2005, Nature.
[38] M. D. Dood,et al. Self-assembled infrared-luminescent Er–Si–O crystallites on silicon , 2004 .
[39] Maria Eloisa Castagna,et al. High efficiency light emitting devices in silicon , 2003 .
[40] F. Priolo,et al. Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2 , 2003 .
[41] Pieter G. Kik,et al. Exciton–erbium interactions in Si nanocrystal-doped SiO2 , 2000 .
[42] S. Safavi-Naeini,et al. Yb3+sensitized Er3+-doped waveguide amplifiers: a theoretical approach , 1998 .
[43] R. Carius,et al. Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes , 1997 .
[44] Harry A. Atwater,et al. INTERBAND TRANSITIONS IN SNXGE1-X ALLOYS , 1997 .
[45] T. R. Gosnell,et al. Uniform upconversion in high-concentration Er(3+)-doped soda lime silicate and aluminosilicate glasses. , 1997, Optics letters.
[46] Nobuyoshi Koshida,et al. Visible electroluminescence from porous silicon , 1992 .