论文信息 - High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy - 字舞流文

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

High-quality epitaxial films of 2.3-µm-thick GaAs were grown on 3-in-diam

H. Morkoc | R. Fischer | W. Kopp | R. Fischer | H. Morkoç | L. Erickson | C. Peng | T. Henderson | T. Henderson | C.K. Peng | W. Kopp | L.P. Erickson | M.D. Longerbone | R.C. Youngman | M. Longerbone | R. Youngman

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