Fabrication and characteristics of 0.12 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted process
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Woojin Chang | Jae-Kyoung Mun | Haecheon Kim | Jong-Won Lim | Ho-Kyun Ahn | Hong-Gu Ji | J. Mun | Woojin Chang | Jong-Won Lim | H. Ahn | Hae-cheon Kim | Hong-gu Ji
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