论文信息 - Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method - 字舞流文

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

D. Okamoto | K. Fukuda | T. Hatakeyama | M. Sometani | S. Harada | H. Okumura | Y. Yonezawa | M. Takei | H. Ishimori | S. Takasu