Phase change memory device and memory cell array thereof

The present invention relates to a phase change memory device and its memory cell array. A memory cell array of a phase change memory device described in the first and second cell regions; Wherein the first local bit line to the first cell area; A second local bit line to the second cell area; And located between the first and second cell region, it comprises selecting in response to a local selection signal connecting the first and second local bit line to a global bit line youngyeokreul. According to the present invention, the layout area can be reduced and it is possible to supply the program current to the selected memory cell is sufficient.