High temperature operation of an integrated erbium-doped DBR laser on an ultra-low-loss Si3N4 platform

We demonstrate record high temperature operation, 400 °C, of an integrated Al<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup> DBR laser on an ultra-low-loss Si<sub>3</sub>N<sub>4</sub> waveguide platform. Additionally, the device exhibits an uncompensated temperature dependent wavelength shift of 1.92 GHz/°C and maintains over 1.5 mW of output power throughout the entire temperature range.

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