论文信息 - Fabrication technique for Si single-electron transistor operating at room temperature

Fabrication technique for Si single-electron transistor operating at room temperature

A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunnelling barrier at each end by means of pattern-dependent oxidation. With this structure, the total capacitance was reduced to approximately 2aF, which enabled conductance oscillation of the SET at room temperature.

[1] Krishna C. Saraswat,et al. Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides , 1988 .

[2] John R. Tucker,et al. Complementary digital logic based on the ``Coulomb blockade'' , 1992 .

[3] Haroon Ahmed,et al. Coulomb blockade in a silicon tunnel junction device , 1994 .

[4] Counter‐oxidation of superficial Si in single‐crystalline Si on SiO2 structure , 1994 .