Effect of MSi2/Si(111) (M=Co, Ni) interface structure on metal induced lateral crystallization

[1]  S. Joo,et al.  Novel Offset-Gated Bottom Gate Poly-Si TFTs With a Combination Structure of Ultrathin Channel and Raised Source/Drain , 2008, IEEE Electron Device Letters.

[2]  Ji-Su Ahn,et al.  The effect of dopants on the microstructure of polycrystalline silicon thin film grown by MILC method , 2006 .

[3]  J. Stoemenos,et al.  Excimer laser annealing of amorphous and solid-phase-crystallized silicon films , 1999 .

[4]  D. Choi,et al.  Field Aided Lateral Crystallization of Amorphous Silicon Thin Film , 1999 .

[5]  D. Mangelinck,et al.  Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si , 1998 .

[6]  Young Jin Choi,et al.  Electric-field-enhanced crystallization of amorphous silicon , 1998, Nature.

[7]  Seung-Ki Joo,et al.  Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization , 1996 .

[8]  C. Hayzelden,et al.  Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films , 1993 .

[9]  S. Oktyabrsky,et al.  Mesotaxy by nickel diffusion into a buried amorphous silicon layer , 1992 .

[10]  E. Baerends,et al.  MSi_{2}/Si(111) (M=Co,Ni) interface chemical bond , 1988 .

[11]  H. Dr.  New silicide interface model from structural energy calculations. , 1988 .

[12]  J. Spence,et al.  Atomic structure of the NiSi2/(111)Si interface , 1982 .

[13]  S. Joo,et al.  A study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization , 1999 .