论文信息 - Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron traps in oxide. The experimental results on positive charge build-up at low dose-rates and small electric field in oxide are presented. The use of an MOS transistor in bipolar mode for investigation of surface peripheral recombination current in bipolar transistors and extraction of MOS structure physical parameters is described.

V. V. Belyakov | Viacheslav S. Pershenkov | I. N. Shvetzov-Shilovsky | A. V. Shalnov

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