Novel modulated flow technique for the OMCVD growth of CdHgTe at 300°C

[1]  D. Edwall Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes , 1993 .

[2]  O. Acher,et al.  In situ reflectance anisotropy studies of the growth of CdTe and other compounds by MOCVD , 1993 .

[3]  S. Ghandhi,et al.  Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniques , 1992 .

[4]  Ishwara B. Bhat,et al.  Recent advances in the organometallic vapor phase epitaxial growth of HgCdTe by the direct alloy growth process , 1992 .

[5]  M. Nunoshita,et al.  The growth rate of CdxHg1−xTe grown by metalorganic chemical vapor deposition , 1992 .

[6]  R. Korenstein,et al.  The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltelluride , 1991 .

[7]  R Triboulet,et al.  Alternative small gap materials for IR detection , 1990 .

[8]  A. Katty,et al.  MOVPE growth and characterization of Hg0.7Cd0.3Te layers , 1990 .

[9]  P. M. Raccah,et al.  Study of mercury cadmium telluride epilayers grown by metalorganic vapor‐phase epitaxy , 1985 .

[10]  J. B. Mullin,et al.  A new MOVPE technique for the growth of highly uniform CMT , 1984 .

[11]  J. B. Mullin,et al.  The growth of highly uniform cadmium mercury telluride by a new MOVPE technique , 1984 .

[12]  Steven M. Johnson,et al.  MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk , 1991 .

[13]  R. Triboulet MOVPE of narrow band gap II–VI materials , 1991 .

[14]  A. Katty,et al.  Low temperature growth of (Cd,Hg) Te layers by MOVPE , 1991 .

[15]  J. Mullin,et al.  Photochemical MOVPE Growth of Compound Semi-Conductors , 1989 .