Novel modulated flow technique for the OMCVD growth of CdHgTe at 300°C
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R. Triboulet | A. Lusson | A. Tromson-Carli | V. Sallet | Y. Marfaing | R. Druilhe | C. Grattepain | M. Rommeluére
[1] D. Edwall. Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes , 1993 .
[2] O. Acher,et al. In situ reflectance anisotropy studies of the growth of CdTe and other compounds by MOCVD , 1993 .
[3] S. Ghandhi,et al. Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniques , 1992 .
[4] Ishwara B. Bhat,et al. Recent advances in the organometallic vapor phase epitaxial growth of HgCdTe by the direct alloy growth process , 1992 .
[5] M. Nunoshita,et al. The growth rate of CdxHg1−xTe grown by metalorganic chemical vapor deposition , 1992 .
[6] R. Korenstein,et al. The metalorganic chemical vapor deposition growth of HgCdTe on GaAs at 300 °C using diisopropyltelluride , 1991 .
[7] R Triboulet,et al. Alternative small gap materials for IR detection , 1990 .
[8] A. Katty,et al. MOVPE growth and characterization of Hg0.7Cd0.3Te layers , 1990 .
[9] P. M. Raccah,et al. Study of mercury cadmium telluride epilayers grown by metalorganic vapor‐phase epitaxy , 1985 .
[10] J. B. Mullin,et al. A new MOVPE technique for the growth of highly uniform CMT , 1984 .
[11] J. B. Mullin,et al. The growth of highly uniform cadmium mercury telluride by a new MOVPE technique , 1984 .
[12] Steven M. Johnson,et al. MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk , 1991 .
[13] R. Triboulet. MOVPE of narrow band gap II–VI materials , 1991 .
[14] A. Katty,et al. Low temperature growth of (Cd,Hg) Te layers by MOVPE , 1991 .
[15] J. Mullin,et al. Photochemical MOVPE Growth of Compound Semi-Conductors , 1989 .