β matrix concept for ESD power devices, demonstrators in C45nm & C32nm CMOS technology

The Electrostatic Discharge (ESD) protection for advanced CMOS technologies is based on efficient power devices. One challenge is to have compact power devices with high flexibility for IO frame integration. In this context, we propose the β matrix concept to provide robust and compact ESD power devices. Moreover, the βij element could be also a matrix with N+/P+ topology which leads to for example embedded diode or dual SCR in the same device. To illustrate, this paper presents and compare silicon results of an ESD diode in C45nm and of a dual isolated Silicon Controlled Rectifier (SCR) in C32nm CMOS technology. Also, these devices within compatible IO frame are qualified through Transmission Line Pulse (TLP) & Very Fast TLP. Moreover, a Beta matrix with its associated trigger circuit is also presented and discussed.

[1]  P. Galy,et al.  Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology , 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

[2]  P. Galy,et al.  Beta-Matrix ESD network: Throughout end of placement rules? , 2011, 2011 IEEE International Conference on IC Design & Technology.

[3]  A. Concannon,et al.  Multi-port ESD protection using bi-directional SCR structures , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

[4]  E. Rosenbaum,et al.  A dual-base triggered SCR with very low leakage current and adjustable trigger voltage , 2008, EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium.

[5]  Yu Bo,et al.  A novel dual SCR device for ESD protection , 2009, 2009 IEEE 8th International Conference on ASIC.

[6]  E. Rosenbaum,et al.  Layout guidelines for optimized ESD protection diodes , 2007, 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

[7]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .