A new secondary ion mass spectrometry (SIMS) system with high-intensity cluster ion source

Abstract Secondary ion mass spectrometry (SIMS) with gas cluster ion beams (GCIB) was investigated with experiments and molecular dynamics (MD) simulations. A new cluster SIMS system with high-intensity cluster ion source has been developed. Ar cluster ion beam with the average size of 2000 was utilized as a primary ion beam. The beam diameter is less than 1 mm at the target position, and a current density of 10 μA/cm2 is obtained. The etch rate of Si with this current density is more than 20 nm/min, which is far beyond the etch rate in recent low energy SIMS system. The secondary ion intensity linearly increases with the acceleration voltage. A threshold voltage of a few keV for secondary ion emission was found. These results are consistent with previous sputtering experiments.

[1]  I. Yamada,et al.  Low-damage surface processing by gas cluster ion beams , 1995 .

[2]  R. Torti,et al.  Secondary ion mass spectrometry with gas cluster ion beams , 2002 .

[3]  T. Tombrello.  Cluster—solid interactions☆ , 1995 .

[4]  Molecular dynamics and Monte-Carlo simulation of sputtering and mixing by ion irradiation , 2001 .

[5]  Emile A. Schweikert,et al.  A Comparison of Desorption Yields from C+60 to Atomic and Polyatomic Projectiles at keV Energies , 1996 .

[6]  R. Lareau,et al.  Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis , 2001 .

[7]  I. Yamada,et al.  Surface treatment of diamond films with Ar and O2 cluster ion beams , 1999 .

[8]  G. Gillen,et al.  Use of an SF5+ polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument , 2000 .

[9]  Isao Yamada,et al.  Materials Processing by Gas Cluster Ion Beams , 2001 .

[10]  Weber,et al.  Computer simulation of local order in condensed phases of silicon. , 1985, Physical review. B, Condensed matter.

[11]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[12]  R. Torti,et al.  Etching and Surface Smoothing with Gas-Cluster Ion Beams , 1999 .

[13]  I. Yamada,et al.  Generation of the large current cluster ion beam , 2003 .

[14]  R. King,et al.  Development of a triplasmatron ion source for the generation of SF5+ and F− primary ion beams on an ion microscope secondary ion mass spectrometry instrument , 1999 .

[15]  I. Yamada,et al.  Sputtering of elemental metals by Ar cluster ions , 1997 .

[16]  T. Sugii,et al.  A high performance 50 nm PMOSFET using decaborane (B/sub 10/H/sub 14/) ion implantation and 2-step activation annealing process , 1997, International Electron Devices Meeting. IEDM Technical Digest.