Preparation and tunneling magnetoresistance of (Ga,Mn)As trilayer structures on Si (0 0 1) substrates

[1]  Shinya Sato,et al.  Magnetotransport properties and the annealing effect of (Ga, Mn)As/Si heterostructures and substrate-free (Ga, Mn)As films , 2005 .

[2]  Y. Tsunashima,et al.  Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane , 2005 .

[3]  H. Ohno,et al.  Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction. , 2004, Physical review letters.

[4]  Hideo Ohno,et al.  Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier , 2004 .

[5]  Y. Jinbo,et al.  Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(1 0 0) substrates , 2003 .

[6]  H. Ohno,et al.  Valence band barrier at (Ga,Mn)As/GaAs interfaces , 2002 .

[7]  Y. Satoh,et al.  Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs , 2001 .

[8]  H. Ohno,et al.  Electric-field control of ferromagnetism , 2000, Nature.

[9]  H. Ohno,et al.  Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures , 2000 .

[10]  Masaaki Tanaka,et al.  Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructures , 1999 .

[11]  H. Ohno,et al.  Making nonmagnetic semiconductors ferromagnetic , 1998, Science.

[12]  Hiro Munekata,et al.  FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS/GASB , 1997 .

[13]  Masahiro Akiyama,et al.  Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD , 1984 .