Switching device based on first-order metal- insulator transition induced by external electric field
暂无分享,去创建一个
A. Zaslavsky | Wiley Interscience | A. Zaslavsky | Ed By | S. Luryi | J. M. Xu | Feliks Chudnovskiy | Boris Spivak
[1] Patrick Georges,et al. Femtosecond laser excitation of the semiconductor‐metal phase transition in VO2 , 1994 .
[2] Pouget,et al. Comment on "VO2: Peierls or Mott-Hubbard? A view from band theory" , 1994, Physical Review Letters.
[3] A. Schrott,et al. Mott transition field effect transistor , 1998 .
[4] A. J. Moulson,et al. Transition Metal Oxides , 1991 .
[5] H. Nakatsugawa,et al. Electronic structures in VO 2 susing the periodic polarizable point-ion shell model and DV-Xα method , 1997 .
[6] F. A. Chudnovskiǐ. Metal-semiconductor phase transition in vanadium oxides and technical applications , 1975 .
[7] J. A. Misewich,et al. A field effect transistor based on the Mott transition in a molecular layer , 1996 .
[8] T. M. Rice,et al. Metal‐Insulator Transitions , 2003 .