论文信息 - Imaging and local current transport measurements of AlInP quantum dots grown on GaP

Imaging and local current transport measurements of AlInP quantum dots grown on GaP

Individual AlInP self-assembled quantum dots grown on a (100) GaP substrate are imaged and probed using ballistic electron emission microscopy (BEEM). The excellent nanometer scale lateral resolution of BEEM is utilized to inject carriers directly into a single quantum dot, and thus, current transport through the dot investigated without any direct electrical contact. The BEEM spectra taken on and off the dot revealed a local conduction-band offset between GaP and AlInP with a barrier height of ΔEc∼0.13±0.01 eV.

R. Dupuis | V. Narayanamurti | J. Ryou | U. Chowdhury | C. V. Reddy

[1] T. S. Tan,et al. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency , 1999 .

[2] Andreas Stintz,et al. Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .

[3] Mikhail V. Maximov,et al. 3.5 W CW operation of quantum dot laser , 1999 .

[4] V. Narayanamurti,et al. Local conduction band offset of GaSb self-assembled quantum dots on GaAs , 1997 .

[5] O'Shea,et al. Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy. , 1996, Physical review letters.

[6] M. Prietsch,et al. BEEM spectroscopy at interfaces of Au, Ag, Cu, Mg and Ni films with n-GaP(110) , 1991 .

[7] M. Prietsch,et al. Ballistic electron emission spectroscopy of noble metal–GaP(110) interfaces , 1991 .

[8] Bell,et al. Electron heating by lower hybrid waves in the PLT tokamak. , 1988, Physical review letters.

[9] J. Shealy,et al. Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy , 1987 .