Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature

Abstract High quality crystals of V 2 O 4 have been grown which have a change in resistivity of a factor of 10 5 at 339°K. The temperature dependence of the absorption edge is found to be twice as large as for semiconductor such as germanium. The dependence of the transition temperature and semiconducting resistivity upon uniaxial stress and hydrostatic pressure has been determined.