Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W.

[1]  Victor Ryzhii,et al.  The theory of quantum-dot infrared phototransistors , 1996 .

[2]  Anupam Madhukar,et al.  Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution , 1999 .

[3]  Jamie D. Phillips,et al.  Self-assembled InAs-GaAs quantum-dot intersubband detectors , 1999 .

[4]  E. Towe,et al.  A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector , 1999 .

[5]  Joe C. Campbell,et al.  Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region , 2001 .

[6]  Joe C. Campbell,et al.  InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region , 2001 .

[7]  Sanjay Krishna,et al.  High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K , 2001 .

[8]  Tae-Kyung Yoo,et al.  Room temperature far infrared (8/spl sim/10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity , 2000 .

[9]  A. Madhukar,et al.  Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots , 2001 .

[10]  Hsien-Shun Wu,et al.  Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer , 2001 .

[11]  Shih-Yen Lin,et al.  High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer , 2001 .

[12]  Hooman Mohseni,et al.  Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector , 1998 .