Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity
暂无分享,去创建一个
Joe C. Campbell | Anupam Madhukar | Eui-Tae Kim | Zhonghui Chen | A. Madhukar | J. Campbell | Eui-Tae Kim | Zhonghui Chen | Zhengmao Ye | Zhengmao Ye
[1] Victor Ryzhii,et al. The theory of quantum-dot infrared phototransistors , 1996 .
[2] Anupam Madhukar,et al. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution , 1999 .
[3] Jamie D. Phillips,et al. Self-assembled InAs-GaAs quantum-dot intersubband detectors , 1999 .
[4] E. Towe,et al. A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector , 1999 .
[5] Joe C. Campbell,et al. Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region , 2001 .
[6] Joe C. Campbell,et al. InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region , 2001 .
[7] Sanjay Krishna,et al. High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K , 2001 .
[8] Tae-Kyung Yoo,et al. Room temperature far infrared (8/spl sim/10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity , 2000 .
[9] A. Madhukar,et al. Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots , 2001 .
[10] Hsien-Shun Wu,et al. Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer , 2001 .
[11] Shih-Yen Lin,et al. High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer , 2001 .
[12] Hooman Mohseni,et al. Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector , 1998 .