论文信息 - Growth of HgTe-ZnTe strained layer superlattices by MOVPE - 字舞流文

Growth of HgTe-ZnTe strained layer superlattices by MOVPE

J. T. Mullins | P. Clifton | N. Lovergine | J. Woods | A. Brinkman | P. Brown

[1] J. Woods,et al. The effect of CdTe substrate orientation on the Movpe growth of CdxHg1−xTe , 1986 .

[2] S. Sivananthan,et al. Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe-ZnTe , 1986 .

[3] T. C. Mcgill,et al. Infrared photoluminescence spectra from HgTe‐CdTe superlattices , 1985 .

[4] J. B. Mullin,et al. A new MOVPE technique for the growth of highly uniform CMT , 1984 .

[5] A. Million,et al. CdTe-HgTe multilayers grown by molecular beam epitaxy , 1982 .

[6] J. A. Silberman,et al. Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy, Hg 1-x Cd x Te , 1982 .

[7] R. Triboulet. (Hg,Zn)Te: A new material for IR detection , 1988 .

[8] J. T. Mullins,et al. Growth and characterisation of ZnTe and ZnTeCdTe superlattices on GaAs substrates , 1988 .