Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires

The capacitance of arrays of vertical wrapped-gate InAs nanowires is analysed. With the help of a Poisson-Schrödinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material.

[1]  L.-E. Wernersson,et al.  Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate , 2008, IEEE Electron Device Letters.

[2]  Lars Samuelson,et al.  Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires , 2007 .

[3]  Peter M. Asbeck,et al.  A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures , 2006 .

[4]  Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs , 2006, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

[5]  H. Wieder,et al.  Properties of InAs/InAlAs heterostructures , 2001 .

[6]  Lars Samuelson,et al.  One-dimensional steeplechase for electrons realized , 2002 .

[7]  Charles M. Lieber,et al.  Semiconductor nanowires: optics and optoelectronics , 2006 .

[8]  L. Samuelson,et al.  Measurements of the band gap of wurtzite InAs1−xPx nanowires using photocurrent spectroscopy , 2007 .

[9]  Wlodzimierz Nakwaski,et al.  Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds , 1995 .

[10]  A. Seabaugh,et al.  Electrical properties of HfO2/InAs MOS capacitors , 2007, 2007 International Semiconductor Device Research Symposium.

[11]  K. Kukli,et al.  Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water , 2002 .

[12]  Paul K. L. Yu,et al.  Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors , 2007 .

[13]  Andrew G. Glen,et al.  APPL , 2001 .

[14]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[15]  Lars-Erik Wernersson,et al.  InAs nanowire metal-oxide-semiconductor capacitors , 2008 .

[16]  Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment. , 2007, Nano letters.