E-pHEMTs gaining favour for 3G wireless

Abstract Last October's 23rd annual IEEE Gallium Arsenide Integrated Circuit Symposium in Baltimore, MD, USA attracted only 150–180 delegates, fewer than half the number that attended in the previous year, indicating the effect of the telecoms downturn (particularly in the wireless sector) as well as an understandable reluctance to travel for other reasons. Nevertheless, there was still healthy debate about the various technologies competing for the various 3G wireless applications.