A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches

Reliability issues currently hamper the commercialization of capacitive RF MEMS switches. The most important failure mode is parasitic charging of the dielectric of such devices. In this paper we present an improved analytical model that enables us to calculate and understand the effect of insulator charging on the behavior of capacitive RF MEMS switches, and to describe the way they fail, and their reliability. Emphasis is placed on a shift of the pull-out voltage to predict failures. Tests with capacitive RF MEMS switches have been performed that validate the most important features of the model.

[1]  I. De Wolf,et al.  Experimental characterization of stiction due to charging in RF MEMS , 2002, Digest. International Electron Devices Meeting,.

[2]  J. Jason Yao,et al.  RF MEMS from a device perspective , 2000 .

[3]  R. Mihailovich,et al.  Techniques for reliability analysis of MEMS RF switch , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[4]  Gabriel M. Rebeiz.  RF MEMS: Theory, Design and Technology , 2003 .

[5]  Robert Puers,et al.  A low frequency electrical test set-up for the reliability assessment of capacitive RF MEMS switches , 2003 .

[6]  Gabriel M. Rebeiz,et al.  RF MEMS switches and switch circuits , 2001 .

[7]  O. Degani,et al.  A methodology and model for the pull-in parameters of electrostatic actuators , 2001 .

[8]  M. Fischetti,et al.  Charge trapping in high k gate dielectric stacks , 2002, Digest. International Electron Devices Meeting,.

[9]  Michael Hietschold,et al.  Parasitic charging of dielectric surfaces in capacitive microelectromechanical systems (MEMS) , 1998 .

[10]  H. S. Newman,et al.  RF MEMS switches and applications , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[11]  B. Pillans,et al.  Lifetime characterization of capacitive RF MEMS switches , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).