Additional P(3/2) and P(1/2) Infrared Excited State Lines of Gallium and Indium in Silicon.

Abstract : Infrared excitation spectra were measured for the p3/2 lines of gallium in silicon. Two missing lines were observed, and a previous weak or doubtful one was confirmed. Spectra were also obtained of the p1/2 lines of gallium and indium in silicon, demonstrating for the first time the 4p' line for both dopants. Complete correspondence now exists between all observed excited state lines of gallium and indium in silicon and the lines of boron and aluminum, and with those predicted by theory. From the new spectral data, the spin-orbit splitting of the valence bands is calculated to be 42.62 + or - 0.04 meV. (Author)