/spl Omega/FETs transistors with TiN metal gate and HfO/sub 2/ down to 10nm

For the first time, TiN metal gate and high K gate dielectric (HfO/sub 2/) have been successfully integrated on non planar /spl Omega/FETs transistors, with gate lengths down to 10nm. NMOS transistors exhibit an excellent I/sub ON//I/sub OFF/ ratio of 5.10/sup 5/, the best value ever reported for a 10nm non planar device. The use of HfO/sub 2/ reduces the gate leakage current by several orders of magnitude, for EOT of 1.92nm. Very low off-currents are measured with high on-currents, demonstrating the interest of such devices for low power applications.