Characterization of CsI photocathodes at grazing incidence for use in a unit quantum efficiency x-ray streak camera

The performance of CsI photocathodes has been characterized for use with grazing incidence soft x-rays. The total electron yield and pulsed quantum efficiency from a CsI photocathode has been measured in a reflection geometry as a function of photon energy (100 eV to 1 keV), angle of incidence and the electric field between the anode and photocathode. The total electron yield and pulsed quantum efficiency increase as the x-ray penetration depth approaches the secondary electron escape depth. Unit quantum efficiency in a grazing incidence geometry is demonstrated. A weak electric field dependence is observed for the total yield measurements; whilst no significant dependence is found for the pulsed quantum efficiency. Theoretical predictions agree accurately with experiment.

[1]  E. P. Savinov,et al.  Statistics of the External X-ray Photoelectric Effect of Bulk Cathodes , 1971 .

[2]  Amos Breskin,et al.  Secondary Electron Emission from Alkali Halides Induced by X-Rays and Electrons , 1993 .

[3]  T. Boutboul,et al.  Inelastic Electron Interactions in the Energy Range 50 eV to 10 keV in Insulators: Alkali Halides and Metal Oxides , 1996 .

[4]  Johnson,et al.  Time-resolved X-Ray diffraction from coherent phonons during a laser-induced phase transition , 2000, Physical review letters.

[5]  James F. Pearson,et al.  Soft X-ray energy resolution with microchannel plate detectors of high quantum detection efficiency. , 1984 .

[6]  G. W. Fraser The characterisation of soft X-ray photocathodes in the wavelength band 1–300 Å: II. Caesium iodide and other insulators of high photoelectric yield , 1983 .

[7]  Henke,et al.  X-ray-induced secondary-electron emission from solid xenon. , 1989, Physical review. B, Condensed matter.

[8]  M. Cardona,et al.  Optical Properties of the Rubidium and Cesium Halides in the Extreme Ultraviolet , 1970 .

[9]  T. Boutboul,et al.  Electron inelastic mean free path and stopping power modelling in alkali halides in the 50 eV–10 keV energy range , 1996 .

[10]  Jinyuan Liu,et al.  An accumulative x-ray streak camera with sub-600-fs temporal resolution and 50-fs timing jitter , 2003 .

[11]  Frank Scholze,et al.  Determination of the electron–hole pair creation energy for semiconductors from the spectral responsivity of photodiodes , 2000 .

[12]  T. Boutboul,et al.  An improved model for ultraviolet- and x-ray-induced electron emission from CsI , 1999 .

[13]  John Liesegang,et al.  Soft-x-ray-induced secondary-electron emission from semiconductors and insulators: Models and measurements , 1979 .

[14]  Amos Breskin,et al.  Spatial characteristics of electron‐ and photon‐induced secondary electron cascades in CsI , 1994 .

[15]  T. Boutboul,et al.  ULTRAVIOLET PHOTOABSORPTION MEASUREMENTS IN ALKALI IODIDE AND CAESIUM BROMIDE EVAPORATED FILMS , 1998 .

[16]  Rafael Abela,et al.  Optimizing a time-resolved X-ray absorption experiment , 2001 .

[17]  Eric M. Gullikson,et al.  Calibration and standards beamline 6.3.2 at the Advanced Light Source , 1996 .

[18]  Amos Breskin,et al.  Field enhancement of the photoelectric and secondary electron emission from CsI , 1995 .

[19]  Burton L. Henke,et al.  Ultrasoft-X-Ray Reflection, Refraction, and Production of Photoelectrons (100-1000-eV Region) , 1972 .

[20]  B. L. Henke,et al.  The characterization of x‐ray photocathodes in the 0.1–10‐keV photon energy region , 1981 .

[21]  A. Breskin,et al.  Escape length of ultraviolet induced photoelectrons in alkali iodide and CsBr evaporated films: Measurements and modeling , 1998 .

[22]  Amos Breskin,et al.  Characteristics of secondary electron emission from CsI induced by x rays with energies up to 100 keV , 1993 .

[23]  A. Breskin,et al.  Low-energy electron transport in alkali halides , 1994 .

[24]  Amos Breskin,et al.  Monte Carlo simulations of secondary electron emission from CsI, induced by 1–10 keV x rays and electrons , 1992 .