论文信息 - Characterization of metal-gate FinFET variability based on measurements and compact model analyses

Characterization of metal-gate FinFET variability based on measurements and compact model analyses

A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of-the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the Vth variation of the MG FinFETs was analyzed into structure-based (TSi, LG) and material-based (gate work-function) variations for the first time. In addition, the extracted variations were incorporated into the compact model, and FinFET SRAM variability for hp-32-nm node was predicted.

[1] M. Masahara,et al. Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching , 2003, IEEE Electron Device Letters.

[2] K. Endo,et al. Four-Terminal FinFETs Fabricated Using an Etch-Back Gate Separation , 2007, IEEE Transactions on Nanotechnology.

[3] O. Richard,et al. Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs , 2008, 2008 Symposium on VLSI Technology.