Source/Drain Stressor Design for Advanced Devices at 7 nm Technology Node
暂无分享,去创建一个
T. P. Dash | S. Dey | S. Das | J. Jena | E. Mahapatra | C. K. Maiti | Tara Prasanna Dash | S. Dey | J. Jena | S. Das | E. Mahapatra
[1] Chao Zhao,et al. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS) , 2013 .
[2] L. Selmi,et al. On the Apparent Mobility in Nanometric n-MOSFETs , 2007, IEEE Electron Device Letters.
[3] Guo Yiluan,et al. Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods , 2015 .
[4] R. N. Thurston,et al. Erratum: Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects , 1961 .
[5] M. Luisier,et al. Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- $\kappa$ Gate Stacks , 2008, IEEE Transactions on Electron Devices.
[6] M. Shur,et al. Low ballistic mobility in submicron HEMTs , 2002, IEEE Electron Device Letters.
[7] W. Fichtner,et al. Quantum transport in two- and three-dimensional nanoscale transistors : Coupled mode effects in the nonequilibrium Green's function formalism , 2006 .
[8] Charles S. Smith. Piezoresistance Effect in Germanium and Silicon , 1954 .
[9] C. K. Maiti,et al. - Strain-Engineered MOSFETs , 2012, Strain-Engineered MOSFETs.
[10] G. Pei,et al. FinFET design considerations based on 3-D simulation and analytical modeling , 2002 .
[11] W. P. Mason,et al. Use of Piezoresistive Materials in the Measurement of Displacement, Force, and Torque , 1957 .
[12] Y. Kanda,et al. A graphical representation of the piezoresistance coefficients in silicon , 1982, IEEE Transactions on Electron Devices.
[13] Rafael Rios,et al. Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field , 2015, IEEE Transactions on Electron Devices.
[14] A. Love. A treatise on the mathematical theory of elasticity , 1892 .
[15] T. Manku,et al. Valence energy‐band structure for strained group‐IV semiconductors , 1993 .
[16] A. Gnudi,et al. Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation , 2008, IEEE Transactions on Electron Devices.