Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (∼104 for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials.

[1]  Jing Guo,et al.  Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. , 2013, Nano letters.

[2]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[3]  S. Qin,et al.  Functionalization of monolayer MoS2 by substitutional doping: A first-principles study , 2013 .

[4]  Wang Yao,et al.  Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. , 2011, Physical review letters.

[5]  Xiaogan Liang,et al.  Roller-style electrostatic printing of prepatterned few-layer-graphenes , 2010 .

[6]  F. Banhart,et al.  One- and two-dimensional diffusion of metal atoms in graphene. , 2008, Small.

[7]  K. Novoselov,et al.  Metal-graphene interaction studied via atomic resolution scanning transmission electron microscopy. , 2011, Nano letters.

[8]  A. Gonzalez-Elipe,et al.  Adsorption and oxidation of K deposited on graphite , 1996 .

[9]  M. Lundstrom,et al.  Does source-to-drain tunneling limit the ultimate scaling of MOSFETs? , 2002, Digest. International Electron Devices Meeting,.

[10]  Lain-Jong Li,et al.  Highly flexible MoS2 thin-film transistors with ion gel dielectrics. , 2012, Nano letters.

[11]  Hua Zhang,et al.  Single-layer MoS2 phototransistors. , 2012, ACS nano.

[12]  D. Jena,et al.  Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. , 2007, Physical review letters.

[13]  Xiaogan Liang,et al.  Electrostatic force assisted exfoliation of prepatterned few-layer graphenes into device sites. , 2009, Nano letters.

[14]  Michael S. Fuhrer,et al.  High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects , 2012, 1212.6292.

[15]  Qiyuan He,et al.  Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications. , 2012, Small.

[16]  Xiaogan Liang,et al.  MoS2 transistors fabricated via plasma-assisted nanoprinting of few-layer MoS2 flakes into large-area arrays. , 2013, ACS nano.

[17]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[18]  Yoshihiro Iwasa,et al.  Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. , 2013, Nano letters.

[19]  T. Korn,et al.  Low-temperature photocarrier dynamics in monolayer MoS2 , 2011, 1106.2951.

[20]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[21]  M. Knupfer,et al.  Absence of photoemission from the Fermi level in potassium intercalated picene and coronene films: structure, polaron, or correlation physics? , 2012, The Journal of chemical physics.