论文信息 - Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation

Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO 2 /HfO 2 /TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack.

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