Physics-based analytical model of chalcogenide-based memories for array simulation

The conduction mechanisms in chalcogenide materials for phase-change memory (PCM) applications are studied. A trap-limited transport model for sub-threshold conduction in the amorphous chalcogenide is presented, and extended to threshold switching in the amorphous phase and transport in the highly-conductive crystalline phase, providing a fully-comprehensive, analytical model for PCMs. Finally, a PCM self-rectifying cross-point device is studied with the aid of the model, allowing to evaluate the array performance for different temperatures, read scheme and array size