Device Effects and Charging Damage : Correlations Between SPIDER-MEM and CHARM-2

The reasons underlying correlations and lack of corrrelations between SPIDER-MEM and CHARM-2 results are investigated for wafers inplanted in a high-current, low energy ion implanter equipped with a plasma charge-control system. The results can be explained by taking into account the device structure and physics of the SPIDER-MEM devices, and the charging characteristics of the implanter. The work has important implications for comparisons of results obtained from charging monitors and damage monitors.