Laterally-coupled high power GaSb distributed feedback lasers fabricated by nanoimprint lithography at 2 μm wavelength

Here we present a device concept utilizing GaSb-based laterally-coupled DFB-lasers. Fabrication procedure to define the ridge waveguide and the grating makes use of nanoimprint lithography. This technology addresses issues related to mass fabrication and cost of the DFB-lasers. We demonstrate state-of-the-art devices on a range of wavelengths around 2 μm. These lasers exhibit single-mode operation with a maximum side-mode suppression ratio of more than 55 dB and high output power of ~25 mW.