Emerging of two-dimensional materials in novel memristor

[1]  Said Hamdioui,et al.  Fast boolean logic mapped on memristor crossbar , 2015, 2015 33rd IEEE International Conference on Computer Design (ICCD).

[2]  F. Puglisi,et al.  Smart Logic-in-Memory Architecture for Low-Power Non-Von Neumann Computing , 2020, IEEE Journal of the Electron Devices Society.

[3]  F. Zhuge,et al.  Mechanism of nonvolatile resistive switching in graphene oxide thin films , 2011 .

[4]  He Tian,et al.  In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device , 2015, Advanced materials.

[5]  R. Ruoff,et al.  Graphene oxide thin films for flexible nonvolatile memory applications. , 2010, Nano letters.

[6]  Ling Li,et al.  Full imitation of synaptic metaplasticity based on memristor devices. , 2018, Nanoscale.

[7]  O. Richard,et al.  10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation , 2011, 2011 International Electron Devices Meeting.

[8]  Seung Hwan Lee,et al.  Reservoir computing using dynamic memristors for temporal information processing , 2017, Nature Communications.

[9]  Byung Chul Jang,et al.  Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide , 2016 .

[10]  Ming‐Chung Wu,et al.  Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells. , 2017, ACS applied materials & interfaces.

[11]  Wei Lu,et al.  The future of electronics based on memristive systems , 2018, Nature Electronics.

[12]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[13]  Hangbing Lv,et al.  Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials. , 2017, Small.

[14]  Yongsung Ji,et al.  Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture , 2015 .

[15]  T. Berzina,et al.  Investigation of electrical properties of organic memristors based on thin polyaniline-graphene films , 2013, Russian Microelectronics.

[16]  Zhiping Yu,et al.  A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion. , 2012, Nanoscale.

[17]  Varij Panwar,et al.  Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures , 2017 .

[18]  Bin Zhang,et al.  Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS2 nanosheets for nonvolatile rewritable memory devices. , 2017, Nanoscale.

[19]  Qi Liu,et al.  Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects , 2018, Advanced materials.

[20]  D. Akinwande,et al.  Observation of single-defect memristor in an MoS2 atomic sheet , 2020, Nature Nanotechnology.

[21]  Jacek Klinowski,et al.  A new structural model for graphite oxide , 1998 .

[22]  H. Ju,et al.  Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers , 2016 .

[23]  A. A. Menazea,et al.  Laser-assisted for preparation ZnO/CdO thin film prepared by pulsed laser deposition for catalytic degradation , 2020 .

[24]  R. Piccirillo.  Exercise-Induced Myokines With Therapeutic Potential for Muscle Wasting , 2019, Front. Physiol..

[25]  Sung-Min Hong,et al.  Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid. , 2017, Nanoscale.

[26]  Lijun Jiang,et al.  Graphene based functional devices: A short review , 2018, Frontiers of Physics.

[27]  Jin-Wu Jiang.  Graphene versus MoS2: A short review , 2014, 1408.0437.

[28]  Kunnyun Kim,et al.  A High‐On/Off‐Ratio Floating‐Gate Memristor Array on a Flexible Substrate via CVD‐Grown Large‐Area 2D Layer Stacking , 2017, Advanced materials.

[29]  Wei D. Lu,et al.  On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics , 2018, Advanced materials.

[30]  Di Chen,et al.  An Artificial Flexible Visual Memory System Based on an UV‐Motivated Memristor , 2018, Advanced materials.

[31]  Huaqiang Wu,et al.  An artificial nociceptor based on a diffusive memristor , 2018, Nature Communications.

[32]  J. Yang,et al.  Robust memristors based on layered two-dimensional materials , 2018, 1801.00530.

[33]  R. Waser,et al.  Thermochemical resistive switching: materials, mechanisms, and scaling projections , 2011 .

[34]  Lin Gan,et al.  Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2. , 2018, Small.

[35]  Wei Huang,et al.  Preparation of MoS₂-polyvinylpyrrolidone nanocomposites for flexible nonvolatile rewritable memory devices with reduced graphene oxide electrodes. , 2012, Small.

[36]  Myungsoo Kim,et al.  Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides. , 2018, Nano letters.

[37]  Sreetosh Goswami,et al.  Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. , 2017, Nature materials.

[38]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[39]  Siddharth Gaba,et al.  Nanoscale resistive memory with intrinsic diode characteristics and long endurance , 2010 .

[40]  Parami Wijesinghe,et al.  An All-Memristor Deep Spiking Neural Computing System: A Step Toward Realizing the Low-Power Stochastic Brain , 2017, IEEE Transactions on Emerging Topics in Computational Intelligence.

[41]  Rainer Waser,et al.  Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx , 2018 .

[42]  Eby G. Friedman,et al.  Memristor-Based Circuit Design for Multilayer Neural Networks , 2018, IEEE Transactions on Circuits and Systems I: Regular Papers.

[43]  Y. Pershin,et al.  A simple test for ideal memristors , 2018, Journal of Physics D: Applied Physics.

[44]  M. Gao,et al.  Structural Phase Transition Effect on Resistive Switching Behavior of MoS2 -Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices. , 2016, Small.

[45]  Jing Guo,et al.  Atomically Thin Femtojoule Memristive Device , 2017, Advanced materials.

[46]  D. Strukov.  Tightening grip , 2018, Nature Materials.

[47]  Shinhyun Choi,et al.  SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations , 2018, Nature Materials.

[48]  Cheng-Keng Lin,et al.  Tunable Nonvolatile Memory Behaviors of PCBM-MoS2 2D Nanocomposites through Surface Deposition Ratio Control. , 2018, ACS applied materials & interfaces.

[49]  R. Williams,et al.  Sub-nanosecond switching of a tantalum oxide memristor , 2011, Nanotechnology.

[50]  Joon Young Kwak,et al.  Spiking Neural Network (SNN) With Memristor Synapses Having Non-linear Weight Update , 2021, Frontiers in Computational Neuroscience.

[51]  P. Misra,et al.  Tunable Power Switching in Nonvolatile Flexible Memory Devices Based on Graphene Oxide Embedded with ZnO Nanorods , 2014 .

[52]  Wei D. Lu,et al.  Sparse coding with memristor networks. , 2017, Nature nanotechnology.

[53]  Aaron Thean,et al.  A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy , 2019, Advanced Electronic Materials.

[54]  Jack C. Lee,et al.  Thinnest Nonvolatile Memory Based on Monolayer h‐BN , 2019, Advanced materials.

[55]  L. Lauhon,et al.  Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. , 2015, Nature nanotechnology.

[56]  Jack C. Lee,et al.  A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon , 2020, Advanced materials.

[57]  J. Yang,et al.  Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications , 2018 .

[58]  D. Youn,et al.  Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications. , 2018, Small.

[59]  Xu Jing,et al.  Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices , 2017 .

[60]  Haider Abbas,et al.  Towards engineering in memristors for emerging memory and neuromorphic computing: A review , 2021, Journal of Semiconductors.

[61]  Dmitri B. Strukov,et al.  Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks , 2020, Nature Electronics.

[62]  Shibing Long,et al.  Graphene and Related Materials for Resistive Random Access Memories , 2017 .

[63]  Liming Xie,et al.  Local electrical characterization of two-dimensional materials with functional atomic force microscopy , 2019, Frontiers of Physics.

[64]  Ting‐Han Lin,et al.  Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors , 2020, Advanced Materials Interfaces.

[65]  E. Kaxiras,et al.  Correlated insulator behaviour at half-filling in magic-angle graphene superlattices , 2018, Nature.

[66]  K. Choi,et al.  A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices , 2017 .

[67]  Rainer Waser,et al.  Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices. , 2017, ACS nano.

[68]  Yasuo Takahashi,et al.  Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx. , 2018, ACS applied materials & interfaces.

[69]  Jijun Zhao,et al.  Physical properties and device applications of graphene oxide , 2019, 1912.07956.

[70]  M. Calame,et al.  Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiOx-Graphene Memristors. , 2017, Nano letters.

[71]  Yuan-Ron Ma,et al.  Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films. , 2018, ACS applied materials & interfaces.

[72]  L. Chua.  Memristor-The missing circuit element , 1971 .

[73]  Guofa Cai,et al.  Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications , 2016 .

[74]  Si-Chen Lee,et al.  Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design , 2017, Scientific Reports.

[75]  Zhenhua Ni,et al.  Defect engineering in two-dimensional materials , 2019, Journal of Semiconductors.

[76]  Yiping Wang,et al.  Single-Crystal Graphene-Directed van der Waals Epitaxial Resistive Switching. , 2018, ACS applied materials & interfaces.

[77]  F. Wen,et al.  Liquid‐Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications , 2016 .

[78]  Xiaodong Chen,et al.  Mediating Short‐Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores , 2018, Advanced materials.

[79]  Hangbing Lv,et al.  Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer. , 2017, Small.

[80]  L. Qu,et al.  Graphene Oxide Nanoribbon Assembly toward Moisture‐Powered Information Storage , 2017, Advanced materials.

[81]  Bin Yu,et al.  Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets , 2018 .

[82]  Ming Liu,et al.  Light-Gated Memristor with Integrated Logic and Memory Functions. , 2017, ACS nano.

[83]  Jae Ho Shim,et al.  Flexible organic bistable devices based on graphene embedded in an insulating poly(methyl methacrylate) polymer layer. , 2010, Nano letters.

[84]  Daniele Ielmini,et al.  Resistive switching memories based on metal oxides: mechanisms, reliability and scaling , 2016 .

[85]  Guochun Yang,et al.  Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors. , 2018, Small.

[86]  Yuchao Yang,et al.  Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications , 2019, Advanced Materials & Technologies.

[87]  Hua Zhang,et al.  Self-assembled chiral nanofibers from ultrathin low-dimensional nanomaterials. , 2015, Journal of the American Chemical Society.

[88]  Jun Lou,et al.  2D materials: Memristor goes two-dimensional. , 2015, Nature nanotechnology.

[89]  Yuchao Yang,et al.  Nanoscale resistive switching devices: mechanisms and modeling. , 2013, Nanoscale.

[90]  R. Waser,et al.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems. , 2016, Nature nanotechnology.

[91]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[92]  Dwipak Prasad Sahu,et al.  Graphene oxide based synaptic memristor device for neuromorphic computing , 2020, Nanotechnology.

[93]  Ilia Valov,et al.  Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories , 2013, Journal of Solid State Electrochemistry.

[94]  C. Wright,et al.  Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories. , 2017, ACS nano.

[95]  Jianhui Zhao,et al.  Vacancy-Induced Synaptic Behavior in 2D WS2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing. , 2019, Small.

[96]  K. Sun,et al.  Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets. , 2016, Nano letters.

[97]  R. Waser,et al.  Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride , 2017 .

[98]  Chang-Beom Eom,et al.  Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions. , 2017, Nano letters.

[99]  Han Zhang,et al.  Current status and prospects of memristors based on novel 2D materials , 2020 .

[100]  Kai Sun,et al.  Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores. , 2016, ACS nano.

[101]  Chaoxing Wu,et al.  Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot:poly(methyl silsesquioxane) nanocomposites , 2017 .

[102]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[103]  R. H. Kim,et al.  Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets. , 2016, Small.

[104]  Masaki Nakano,et al.  Memristive phase switching in two-dimensional 1T-TaS2 crystals , 2015, Science Advances.

[105]  Y. Gong,et al.  Recent advances of phase engineering in group VI transition metal dichalcogenides , 2019, Tungsten.

[106]  Wei Huang,et al.  Fully Solution‐Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide , 2017 .

[107]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[108]  R. Zhao,et al.  Spontaneous sparse learning for PCM-based memristor neural networks , 2021, Nature Communications.