Behavioral approach to design universal UHF RFID reader transceiver ICs

The proliferation of RFID applications motivates an integrated solution to decrease the size and cost of readers. This paper describes a behavioral approach to design of worldwide regulation compliant UHF RFID reader transceiver for ISO 18000-6 multi-class tags in the ISM band 860 MHz-960 MHz. The approach based on evaluation of the transceiver's building blocks parameters (Dynamic Range, Noise Figure, Sensitivity, P1dB, Phase Noise etc.) in conjunction with required characteristics of complete RFID reader system, i.e. read range, data transmission rate, reading speed, and power consumption etc. Based on direct-conversion architecture, the reader transceiver integrates RF-blocks, frequency synthesizer, modulation and demodulation functions, low frequency analog baseband. Fabricated on a 0.42/0.25 um SiGe BiCMOS process, the transceiver is implemented in LTCC-module and produces output power of +17 dBm; the receiver sensitivity is down to - 85 dBm.

[1]  Roc Berenguer,et al.  Design and Analysis of a Complete RFID System in the UHF Band Focused on the Backscattering Communication and Reader Architecture , 2007 .

[2]  Ping Xu,et al.  Several key issues in single-chip UHF RFID reader design , 2010, 2010 International Conference on Microwave and Millimeter Wave Technology.

[3]  V. V. Elesin,et al.  Balun integral circuits design , 2012, 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology".

[4]  Kai Xu,et al.  Design Verification and Measurement Techniques for UHF RFID Tag IC , 2011, 2011 7th International Conference on Wireless Communications, Networking and Mobile Computing.

[5]  Zhihua Wang,et al.  System design considerations of highly-integrated UHF RFID reader transceiver RF front-end , 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

[6]  V. V. Elesin,et al.  The effect of ionizing radiation on the characteristics of silicon-germanium microwave integrated circuits , 2010 .

[7]  Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing radiation , 2010 .