论文信息 - MBE growth of high-quality GaAs heterostructures for optoelectronic devices

MBE growth of high-quality GaAs heterostructures for optoelectronic devices

The purity of GaAs grown by MBE was improved significantly when the MBE system was modified. The AlGaAs/GaAs quantum well heterostructures for mid-infrared detectors and two color infrared detector and InGaAs/GaAs quantum well heterostructure for vertical cavity surface emitting laser were grown successfully.

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[2] S. Chu,et al. Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular‐beam epitaxy , 1991 .