Application of a New Multi-Scale Approach to Transport in a GaAs/AlAs Heterojunction Structure

Electron transmission and reflection at an interface has long been recognized as a quantum-mechanical problem. With the continually decreasing scale of semiconductor devices, the presence of interfaces has an increasingly significant impact on device performance. Consequently there is a need for an accurate description of devices that includes transport over heterojunctions. The question then becomes how to simulate a small region of quantum transport which exists in an otherwise semiclassical environment. What is needed is a multi-scale approach, with the goal of describing transport far away from the band edges and in a wide range of energies.