Effect of modes of glass-formation on structure of intrinsic or photon induced defects centered on III, IV or V cations in oxide glasses

Abstract Electronic and geometrical structure of intrinsic or photon-induced defects centered on a cation belonging to the III, IV or V group in oxide glasses prepared under different conditions are reviewed by adding new data on Ga, Tl, Ge, Sn, Pb, N, P and As related centers. The effect of modes of glass-formation, redox conditions and the presence of impurities on the structures of the defects is examined. Some new ESR centers are identified by detecting and analyzing hyperfine structures. These include Ga electron centers having the proposed structure of the coordination number depending on the structure of the precursors; (3) the Ge electron center having a similar structure to (1); Tl centers, model structures of which are shown to be and tin related hole and electron centers with the structures Some applications of the ESR method to problems in glass technology are shown; these include alkali transport and radiation damage of an optical fiber.

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