Analysis of floating substrate effects on the intrinsic gate capacitance of SOI MOSFETSs using two-dimensional device simulation

Points out that the theoretical foundation of unique floating substrate effects, which have been observed experimentally, on the intrinsic gate capacitance characteristics of SOI n-MOSFETs has been clearly established using original two-dimensional device simulations. A transient simulation scheme for calculating intrinsic capacitances is introduced and tested against the classical quasi-static and small-signal analyses. The results are discussed and used to gain a deep physical insight into the basic mechanisms responsible for the anomalous (when compared to conventional bulk devices) intrinsic capacitances observed in the case of SOI MOSFETs. The analyses yields basic guidelines for an adequate analytical modeling of SOI MOSFET capacitive behavior to be used for accurate large- and small-signal simulation of SOI MOS digital and analog circuits. >

[1]  J. Colinge.  Silicon-on-Insulator Technology , 1991 .

[2]  Hyung Kyu Lim,et al.  A charge-based large-signal model for thin-film SOI MOSFET's , 1985, IEEE Transactions on Electron Devices.

[3]  D. Dutartre,et al.  CMOS devices and circuits made in lamp-ZMR SOI films , 1988 .

[4]  J. Fossum,et al.  A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD , 1988 .

[5]  P. Yang,et al.  A direct measurement technique for small geometry MOS transistor capacitances , 1985, IEEE Electron Device Letters.

[6]  Jerry G. Fossum,et al.  Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's , 1991 .

[7]  S. E. Laux.  Techniques for small-signal analysis of semiconductor devices , 1985 .

[8]  J. Chen,et al.  A CV technique for measuring thin SOI film thickness , 1991, IEEE Electron Device Letters.

[9]  Characterization of SOI MOSFETs by gate capacitance measurements , 1993, ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.

[10]  R. Howes,et al.  A small-signal model for the frequency-dependent drain admittance in floating-substrate MOSFET's , 1992 .

[11]  J.G. Fossum,et al.  Transient drain current and propagation delay in SOI CMOS , 1984, IEEE Transactions on Electron Devices.

[12]  M. Haond,et al.  Measurement of intrinsic gate capacitances of SOI MOSFET's , 1990, IEEE Electron Device Letters.

[13]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[14]  Denis Flandre.  Measurement and simulation of floating substrate effects on the intrinsic gate capacitance characteristics of SOI n-MOSFETs , 1992 .

[15]  J. Colinge.  Silicon-on-Insulator Technology: Materials to VLSI , 1991 .