Resonant Tunnelling and Superlattice Devices: Physics and Circuits

Resonant tunnelling (RT) through semiconductor double barriers (DB’s) was first demonstrated by Chang et al. [7.1] in 1974. With the development of modern crystal growth techniques, like molecular beam epitaxy (MBE), there has been renewed interest in the subject in recent years [7.2–23]. Material quality has improved to the point that negative differential resistance (NDR) can be observed at room temperature [7.2]. Intense research efforts are directed towards the optimization of the performances of the RT DB’s and their utilization as the building blocks of novel electronic and optical devices.

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