Waveguide Si-Ge Avalanche Photodiode Based on Hole-Generated Impact Ionization

We report a waveguide Si-Ge avalanche photodiode using zero-change foundry processing. A 182 GHz gain-bandwidth product with a responsivity of 11.2 A/W at 1550 nm is experimentally demonstrated through hole-generated impact ionization.

[1]  J Van Campenhout,et al.  High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector. , 2015, Optics express.

[2]  John E. Bowers,et al.  Monolithic Germanium/Silicon Photodetectors With Decoupled Structures: Resonant APDs and UTC Photodiodes , 2014, IEEE Journal of Selected Topics in Quantum Electronics.

[3]  Dong Pan,et al.  56GHz Waveguide Ge/Si Avalanche Photodiode , 2018, 2018 Optical Fiber Communications Conference and Exposition (OFC).

[4]  J. Bowers,et al.  High performance Ge/Si avalanche photodiodes development in intel , 2011, 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference.

[5]  J. Bowers,et al.  Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product , 2009 .

[6]  K. Mckay,et al.  ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM , 1953 .

[7]  Kunzhi Yu,et al.  A 25Gbps low-voltage waveguide Si-Ge avalanche photodiode , 2016, CLEO 2016.

[8]  D. Trotter,et al.  High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes. , 2016, Optics express.