A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches

A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS was precisely measured, where a maximum ON-state photoconductivity of <inline-formula> <tex-math notation="LaTeX">$6.26\,\,(\Omega \cdot \text {m})^{-1}$ </tex-math></inline-formula>, a minimum ON-state resistivity of <inline-formula> <tex-math notation="LaTeX">$0.16~\Omega \cdot \text {m}$ </tex-math></inline-formula>, and an accurate minimum resistance of <inline-formula> <tex-math notation="LaTeX">$1.71~\Omega $ </tex-math></inline-formula> were obtained for SiC substrate. The quantitative relationship between the ON-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.

[1]  Hui Guo,et al.  Performance of a Vertical 4H-SiC Photoconductive Switch With AZO Transparent Conductive Window and Silver Mirror Reflector , 2018, IEEE Transactions on Electron Devices.

[2]  A. Neuber,et al.  Limitations of bulk SiC photoconductive semiconductor switches, and evaluation of PIN SiC photoconductive semiconductor switches , 2016, 2016 IEEE International Conference on Plasma Science (ICOPS).

[3]  A. Neuber,et al.  Pulsed characterization of a UV led for pulsed power applications , 2016, 2016 IEEE International Conference on Plasma Science (ICOPS).

[4]  Hui Guo,et al.  Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC , 2016, IEEE Transactions on Electron Devices.

[5]  A. Neuber,et al.  Characterization of mid-bandgap defect states in 4H-SiC for optimization of SiC photoconductive semiconductor switches , 2014, 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC).

[6]  J. Sullivan.  High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch , 2014 .

[7]  J. Dickens,et al.  Selective electron beam irradiation of high purity semi-insulating 4H silicon carbide substrates to characterize the effects on photoconductive semiconductor switch operation , 2013, 2013 19th IEEE Pulsed Power Conference (PPC).

[8]  A. Neuber,et al.  All solid-state high power microwave source with high repetition frequency. , 2013, The Review of scientific instruments.

[9]  A. Neuber,et al.  A compact 45 kV curve tracer with picoampere current measurement capability. , 2013, Review of Scientific Instruments.

[10]  W. Nunnally,et al.  Comparative Study of Compensated Wide Band Gap Photo Conductive Switch Material for Extrinsic Mode Operations , 2008, 2008 IEEE International Power Modulators and High-Voltage Conference.

[11]  J. Stanley,et al.  Wide Bandgap Extrinsic Photoconductive Switches , 2007, 2007 IEEE 34th International Conference on Plasma Science (ICOPS).

[12]  J. Stanley,et al.  6H-SiC photoconductive switches triggered at below bandgap wavelengths , 2006, IEEE Transactions on Dielectrics and Electrical Insulation.

[13]  Stephen E. Saddow,et al.  4H–SiC photoconductive switching devices for use in high-power applications , 2003 .

[14]  K. Papadopoulos,et al.  Switch opening time reduction in high power photoconducting semiconductor switches , 1996 .