A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications

RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at f/sub T//f/sub max/ = 209/248 GHz (70nm) and f/sub T//f/sub max/ = 166/277 GHz (80nm) with F/sub min/ at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.

[1]  S. Jeng,et al.  SiGe HBTs with cut-off frequency of 350 GHz , 2002, Digest. International Electron Devices Meeting,.

[2]  S. Jeng,et al.  Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology , 2002, IEEE Electron Device Letters.

[3]  D. Friedman,et al.  Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[4]  D. Zupac,et al.  Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designs , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

[5]  B. Jagannathan,et al.  Noise performance of a low base resistance 200 GHz SiGe technology , 2002, Digest. International Electron Devices Meeting,.

[6]  Albert Chin,et al.  The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 /spl mu/m technology nodes , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

[7]  M. Sherony,et al.  Suitability of Scaled SOI CMOS for High-Frequency Analog Circuits , 2002, 32nd European Solid-State Device Research Conference.