High Speed Digital Electronics

Bipolar processes for subnanosecond digital electronics, P. Ashburn bipolar junction transistor modelling, L.J. Herbst bipolar circuit techniques, P.H. Saul anatomy of high performance circuits, R.R. Konian MOS device physics and scaling, A.E. Glaccum MOS advanced technology, T. Yamaguchi nMOS memory circuits, K. Horninger material properties of GaAs, A.D. Welbourn device and circuit models for GaAs ICs, A.D. Welbourn GaAs device physics, P.T. Greiling GaAs logic device and gate design, P.T. Greiling digital GaAs ICs in Japan, M. Ohmori HEMT ICs in Japan, M. Ohmori the heterojunction bipolar transistor, A.A. Rezazadeh optical systems, P.P. Smyth communication requirement, P. Cochrane.