Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation
暂无分享,去创建一个
Chenming Hu | Yogesh Singh Chauhan | Sayeef Salahuddin | Sourabh Khandelwal | Amit Agarwal | Girish Pahwa | Tapas Dutta | C. Hu | G. Pahwa | Y. Chauhan | S. Salahuddin | A. Agarwal | T. Dutta | S. Khandelwal | A. Agarwal
[1] Srivatsava Jandhyala,et al. Quasi-Static Terminal-Charge Model for Symmetric Double-Gate Ferroelectric FETs , 2016, IEEE Transactions on Electron Devices.
[2] Kui Yao,et al. Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory , 2015 .
[3] Chenming Hu,et al. Sub-60mV-swing negative-capacitance FinFET without hysteresis , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).
[4] A. M. Ionescu,et al. Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory , 2011, IEEE Transactions on Electron Devices.
[5] Adrian M. Ionescu,et al. Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor , 2012 .
[6] Chi H. Lee,et al. Ultrafast polarization switching in thin-film ferroelectrics , 2004 .
[7] Seung-Ki Joo,et al. Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance , 2016 .
[8] C. Hu,et al. Circuit performance analysis of negative capacitance FinFETs , 2016, 2016 IEEE Symposium on VLSI Technology.
[9] C.C. McAndrew,et al. Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.
[10] L. You,et al. Negative capacitance in a ferroelectric capacitor. , 2014, Nature materials.
[11] Chenming Hu,et al. Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description , 2016, IEEE Transactions on Electron Devices.